Senior Principal Scientist (Lead, SiC TCAD Device Design), IME
IME is leading the effort to establish the industry leading Silicon Carbide R&D program.
The program aims to advance 200mm Silicon Carbide technologies in epitaxy, device design, process integration, fabrication, and power module packaging.
The main objective is to drive disruptive innovations in power device research, with a focus on >1.2 KV power MOSFETs to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation.
Key responsibilities include high‑power device design, novel device concepts, doping design, gate oxidation, and wide‑bandgap process simulations.
- TCAD modeling & simulation, novel high‑power device design, simulation, and device characterization.
- Design and simulate high‑voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage >1.2 kV using Synopsys/Silvaco simulator.
- Develop and optimize practical and reliable junction terminations.
- Provide technical guidance on device structure, power/performance analysis, process risk assessment, and improvement recommendations.
- Develop and apply MOS device physics‑based TCAD modelling for vertical power devices considering interface state density, gate oxide defects, and defects in Silicon Carbide.
- Model transport and carrier scattering in devices operating in extreme ambient conditions.
- Collaborate with process integration, characterization, and circuit design teams to analyze and troubleshoot device‑related issues.
- Serve as a resource for colleagues with less experience and lead small projects with manageable risks.
- Work closely with internal and external customers to align demands and grow the wide‑bandgap team to ~5 headcounts in the next 3 years.
Job Requirements
- PhD in Electrical Engineering or related field.
- >10 years industrial experience in high‑power device design and modelling.
- Deep knowledge of high‑voltage, high‑power MOSFETs (planar, trench, S‑J, IGBTs) and device characterization on 4H‑SiC & GaN substrates.
- Strong understanding of wide‑bandgap semiconductor materials and advanced MOSFET device physics.
- Ability to teach and