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Urgent! Senior / Staff Engineer - GaN Epitaxy Job Opening In Central Singapore Community Development Council – Now Hiring Infineon Technologies

Senior / Staff Engineer GaN Epitaxy



Job description

#WeAreIn for driving decarbonization and digitalization.
As a global leader in semiconductor solutions in power systems and IoT, Infineon enables game-changing solutions for green and efficient energy, clean and safe mobility, as well as smart and secure IoT.

Together, we drive innovation and customer success, while caring for our people and empowering them to reach ambitious goals.

Be a part of making life easier, safer and greener.
Are you in?
We are on a journey to create the best Infineon for everyone.This means we embrace diversity and inclusion and welcome everyone for who they are.

At Infineon, we offer a working environment characterized by trust, openness, respect and tolerance and are committed to give all applicants and employees equal opportunities.

We base our recruiting decisions on the applicant´s experience and skills.

Learn more about our various contact channels.
Please let your recruiter know if they need to pay special attention to something in order to enable your participation in the interview process.
Click here for more information about Diversity & Inclusion at Infineon.

Job Description
In your new role you will:

  • Development and optimisation of GaN on Si & GaN on Sapphire MOCVD epitaxy processes for power switching applications
  • Design GaN epitaxial layer stacks and growth recipes based on device requirements and performance targets
  • Develop and implement new epitaxial processes for advanced wafer products
  • Troubleshoot and resolve issues that arise during material growth to ensure high-quality epitaxial layers
  • Work closely with device engineers to develop next-generation technologies

Your Profile
You are best equipped for this task if you have:

  • Ph.D in Material Science (or) Masters in Material Science / Chemistry/ Solid State Physics with 3+ years of Industry experience (or) Undergraduate degree with 5+ years of Industry experience with focus onIII-V Hetero-epitaxy MOCVD
  • Hands-on experience in operating MOCVD tools (Aixtron / Veeco /others) for AlGaN/GaN HEMT systems on Silicon and Sapphire Substrates(critical requirement)
  • Experience in Metrology and material characterisation techniques and tools ( for eg - AFM/TEM/XRD/PL/Ellipsometry/FTIR) (critical requirement)
  • Experience in III-V device processing tools and processes (for eg -RIE/ Wet etch / Passivation) (is a plus)
  • Understanding of basic device concepts pertaining to AlGaN/GaN HEMTs for power switching applications (is a plus)
  • Expertise in data organisation / data analysis
  • Good communication skills and ability to work with cross-functional teams in a global R&D organization


Required Skill Profession

Other General



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