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ROLE:
A*STAR-IME is leading the way in establishing industry first 200mm open Silicon Carbide (SiC) R&D program.
The program specific focus is on advancing 200mm SiC technologies in key areas such as epitaxy, gate stack, ion implantation, and dry etching, and integrating these modules to fabricate high-performance power devices.
Our objective is to drive innovation in power device research, particularly in power MOSFETs rated above 1.2KV.
Developing key innovative process is crucial for creating high-performance devices that will contribute to advancements in automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation.
This role involve growing leadership into ion implantation processes for p-body, channel, guard ring, source contact, and other components.
We are currently seeking such individual with ~5 years of experience in ion implantation.
The chosen candidate will be responsible for independently supervising ion implantation processes, conducting ion implant simulations, possessing knowledge of crystallography and ion interaction with atoms, having strong understanding of implanters and related thermal processing physics, beam optics, dosimetry systems, and vacuum technology.
The ideal candidate should also be willing to collaborate with various departments, the technology development group, and customers.
Furthermore, the candidate will contribute to the wide-bandgap team by sharing the ion implantation expertise on compound semiconductor materials and collaborate with other departments working with Si-based technology.
The candidate will also be groomed to lead this diffusion process module group of ~6 headcounts into the future.
ROLE:
A*STAR-IME is leading the way in establishing industry first 200mm open Silicon Carbide (SiC) R&D program.
The program specific focus is on advancing 200mm SiC technologies in key areas such as epitaxy, gate stack, ion implantation, and dry etching, and integrating these modules to fabricate high-performance power devices.
Our objective is to drive innovation in power device research, particularly in power MOSFETs rated above 1.2KV.
Developing key innovative process is crucial for creating high-performance devices that will contribute to advancements in automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation.
This role involve growing leadership into ion implantation processes for p-body, channel, guard ring, source contact, and other components.
We are currently seeking such individual with ~5 years of experience in ion implantation.
The chosen candidate will be responsible for independently supervising ion implantation processes, conducting ion implant simulations, possessing knowledge of crystallography and ion interaction with atoms, having strong understanding of implanters and related thermal processing physics, beam optics, dosimetry systems, and vacuum technology.
The ideal candidate should also be willing to collaborate with various departments, the technology development group, and customers.
Furthermore, the candidate will contribute to the wide-bandgap team by sharing the ion implantation expertise on compound semiconductor materials and collaborate with other departments working with Si-based technology.
The candidate will also be groomed to lead this diffusion process module group of ~6 headcounts into the future.
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